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TK17A80W

Silicon N-Channel MOSFET

TK17A80W Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.25 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 0.85mA) 3. Packaging and Internal Circuit TK17A80W 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute

TK17A80W Datasheet (410.21 KB)

Preview of TK17A80W PDF

Datasheet Details

Part number:

TK17A80W

Manufacturer:

Toshiba ↗

File Size:

410.21 KB

Description:

Silicon n-channel mosfet.

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TK17A80W Silicon N-Channel MOSFET Toshiba

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