TPC8036-H Datasheet - Toshiba Semiconductor

TPC8036-H Field Effect Transistor

TPC8036-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPC8036-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 13 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 3.1 mΩ (typ.) High forward transfer admittance: |Yfs| = 64 S (typ.) Low leakage current.

TPC8036-H Features

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TPC8036-H_ToshibaSemiconductor.pdf