TPC8401 Datasheet - Toshiba Semiconductor

TPC8401 MOSFET

TPC8401 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U MOSII) TPC8401 Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PCs Low drain source ON resistance : P Channel RDS (ON) = 27 mΩ (typ.) N Channel RDS (ON) = 14 mΩ (typ.) High forward transfer admittance : P Channel |Yfs| = 7 S (typ.) N Channel |Yfs| = 8 S (typ.) Low leakage current : P Channel IDSS = 10 µA (VDS = 30 V) N Channel IDSS = 10 µA (VDS = 30 V) E.

TPC8401 Features

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TPC8401 Datasheet (750.53 KB)