TPC8401 Datasheet - Toshiba Semiconductor

TPC8401, MOSFET

TPC8401 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U *MOSII) TPC8401 Lithium Ion Secondary Battery Applications Portable E.

Features

* d by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
* The information co

Applications

* Portable Equipment Applications Notebook PCs Low drain
* source ON resistance : P Channel RDS (ON) = 27 mΩ (typ. ) N Channel RDS (ON) = 14 mΩ (typ. ) High forward transfer admittance : P Channel |Yfs| = 7 S (typ. ) N Channel |Yfs| = 8 S (typ. ) Low leakage current : P Channel IDSS =
* 10 µA

TPC8401_ToshibaSemiconductor.pdf