TPC8401
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U- MOSII)
Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PCs
Low drain- source ON resistance : P Channel RDS (ON) = 27 mΩ (typ.) N Channel RDS (ON) = 14 mΩ (typ.) High forward transfer admittance : P Channel |Yfs| = 7 S (typ.) N Channel |Yfs| = 8 S (typ.) Low leakage current : P Channel IDSS =
- 10 µA (VDS =
- 30 V) N Channel IDSS = 10 µA (VDS = 30 V) Enhancement- mode : P Channel Vth =
- 0.8~
- 2.0 V (VDS =
- 10 V, ID =
- 1m A) N Channel Vth = 0.8~2.5 V (VDS = 10 V, ID = 1m A) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating P Channel N Channel
- 30
- 30 ±20
- 4.5
- 18 1.5 1.0 0.75 0.45 26.3 (Note 4a)
- 4.5 0.10 150
- 55~150 30 30 ±20 6 24 1.5 1.0 W 0.75 0.45 46.8 (Note 4b) 6 m J A m J...
