TPC8403
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII)
Motor Drive Applications Notebook PC Applications Portable Equipment Applications
- -
- - P Channel RDS (ON) = 45 mΩ (typ.) N Channel RDS (ON) = 25 mΩ (typ.) High forward transfer admittance: P Channel |Yfs| = 6.2 S (typ.) N Channel |Yfs| = 7.8 S (typ.) Low leakage current: P Channel IDSS =
- 10 µA (VDS =
- 30 V) N Channel IDSS = 10 µA (VDS = 30 V) Low drain-source ON resistance: Unit: mm
Enhancement mode : P Channel Vth =
- 1.0~- 2.2 V (VDS =
- 10 V, ID =
- 1 m A) : N Channel Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 m A)
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD(1) PD(2) PD(1) PD(2) EAS IAR EAR Tch Tstg Rating P Channel N Channel
- 30
- 30 ±20
- 4.5
- 18 1.5 1.1 0.75 0.45 26.3 (Note 4a)
- 4.5 0.11 150
- 55~150 30 30 ±20 6 24 1.5 1.1 W 0.75...
