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TPC8401
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U−MOSII)
TPC8401
Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PCs
Low drain−source ON resistance : P Channel RDS (ON) = 27 mΩ (typ.) N Channel RDS (ON) = 14 mΩ (typ.) High forward transfer admittance : P Channel |Yfs| = 7 S (typ.) N Channel |Yfs| = 8 S (typ.) Low leakage current : P Channel IDSS = −10 µA (VDS = −30 V) N Channel IDSS = 10 µA (VDS = 30 V) Enhancement−mode : P Channel Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1mA) N Channel Vth = 0.8~2.
TPC8401 Datasheet
