* le-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s (W) (V) PD VDS
* 30 12 VGS (V) TPC8403 P-channel rth
* tw 1000 Device mounted on a
TPC8403
Toshiba ↗ Semiconductor
309.98 KB
Mosfet.
TPC8403
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII)
TPC8403
Motor Drive Applications Notebook .
📁 Related Datasheet
TPC8401 MOSFET (Toshiba Semiconductor)
TPC8402 MOSFET (Toshiba Semiconductor)
TPC8405 Field Effect Transistor (Toshiba)
TPC8406-H Field Effect Transistor (Toshiba)
TPC8407 Silicon Dual-Channel MOSFET (Toshiba)
TPC8408 Silicon Dual-Channel MOSFET (Toshiba)
TPC8.2A Transient Voltage Suppressors (Vishay)
TPC8001 N-Channel MOSFET (Toshiba Semiconductor)
TPC8002 N-Channel MOSFET (Toshiba Semiconductor)
TPC8003 N-Channel MOSFET (Toshiba Semiconductor)
