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1SS387CT - Switching Diodes

Key Features

  • (1) Small package (2) Low forward voltage: VF(3) = 0.98 V (typ. ) (3) Fast reverse recovery time: trr = 1.6 ns (typ. ) (4) Small total capacitance: Ct = 0.5 pF (typ. ) 3. Packaging and Internal Circuit CST2 1SS387CT 1: Cathode 2: Anode Start of commercial production 2004-08 1 2014-04-04 Rev.3.0 1SS387CT 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 Peak forward.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Switching Diodes Silicon Epitaxial Planar 1SS387CT 1. Applications • Ultra-High-Speed Switching 2. Features (1) Small package (2) Low forward voltage: VF(3) = 0.98 V (typ.) (3) Fast reverse recovery time: trr = 1.6 ns (typ.) (4) Small total capacitance: Ct = 0.5 pF (typ.) 3. Packaging and Internal Circuit CST2 1SS387CT 1: Cathode 2: Anode Start of commercial production 2004-08 1 2014-04-04 Rev.3.0 1SS387CT 4.