1SS387CT Datasheet, diodes equivalent, Toshiba

1SS387CT Features and benefits

1SS387CT Application

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📁 Related Datasheet

1SS387 - Diode (Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS387 Ultra High Speed Switching Applications  AEC-Q101 Qualified (Note1)  Compact 2-pin package – id.

1SS380 - Switching diode (Rohm)
1SS380 Switching Diode (Low leakage) 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ●Outline VRM 40 V IFM 225 mA Io 100 mA IFSM 400 mA ●Features H.

1SS380TF - Switching Diode (Rohm)
Switching Diode 1SS380TF Applications High speed switching Dimensions (Unit : mm) 1.25±0.1 0.1±0.1 　　　 0.05 AEC-Q101 Qualified Land size figur.

1SS380VM - Switching Diode (ROHM)
1SS380VM Switching Diode (Low leakage) 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ●Outline VRM 80 V IFM 225 mA Io 100 mA IFSM 400 .

1SS381 - Silicon diode (Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS381 1SS381 VHF Tuner Band Switch Applications • Small package • Small total capacitance: CT = 1.2 pF.

1SS382 - Silicon diode (Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application  Small package  Composed of 2 independent diodes.  Lo.

1SS383 - Silicon diode (Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 1SS383 Low Voltage High Speed Switching  Small package  Composed of 2 independent dio.

1SS384 - Silicon diode (Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching z Small package z Composed of 2 independent diodes. z Lo.

1SS385 - Silicon diode (Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385 High Speed Switching 1SS385 Unit: mm z Low forward voltage: VF (2) = 0.23V (typ.) @IF =.

1SS385F - Diode (Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching 1SS385F Unit in mm Low forward voltage: VF = 0.23V (typ.) @IF = 5.