2N3790 Datasheet, Transistor, Toshiba

2N3790 Features

• Transistor . High Gain and Excellent hFE Linearity: hFE=15(Min.) @ VC E=-2V, Ic=-3A Low Saturation Voltage: VcE(sat)=-1.0V(Max.) @ I C=-4A, Ib=-0.4A Unit in mm MAXIMUM RATINGS (Ta=25 C) CHARA

PDF File Details

Part number:

2N3790

Manufacturer:

Toshiba ↗

File Size:

85.32kb

Download:

📄 Datasheet

Description:

Silicon pnp transistor.

2N3790 Application

• Applications FEATURES . High Gain and Excellent hFE Linearity: hFE=15(Min.) @ VC E=-2V, Ic=-3A Low Saturation Voltage: VcE(sat)=-1.0V(Max.) @ I

TAGS

2N3790

Toshiba

📁 Related Datasheet

2N379 - PNP Transistor (Motorola)
76 A 2N3 (GERMANIUM) For Spe~ifications, See 2N350A Data. 2N378 thru 2N380(GERlt\ANIUM) 2N459,A C(A10S-3)E1 l~ l~ · PNP germanium power transi.

2N3790 - Silicon PNP Power Transistor (Inchange Semiconductor)
isc Silicon PNP Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum.

2N3790 - PNP POWER TRANSISTORS (Central Semiconductor)
2N3789 2N3791 2N3790 2N3792 SILICON PNP POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3789, 2N3790,.

2N3790 - PNP silicon power transistors (Motorola)
2N3789 thru 2N3792 (SILICON) CASEll~. (TO-3) ~ PNP silicon power transistors for medium-speed switching and amplifier applications. Complement to N.

2N3790 - EPITAXIAL-BASE TRANSISTORS (Comset Semiconductor)
PNP 2N3789 – 2N3790 – 2N3791 – 2N3792 EPITAXIAL-BASE TRANSISTORS The 2N3789, 2N3790, 2N3791 and 2N3792 are silicon epitaxial-base PNP power transistor.

2N3791 - PNP POWER TRANSISTORS (Central Semiconductor)
2N3789 2N3791 2N3790 2N3792 SILICON PNP POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3789, 2N3790,.

2N3791 - Silicon PNP Power Transistors (Inchange Semiconductor)
Inchange Semiconductor Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2N3715 ,2N3716 ·Excellent safe operating area.

2N3791 - PNP HIGH POWER SILICON TRANSISTOR (Microsemi)
TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/379 Devices 2N3791 2N3792 Qualified Level JAN JANTX JANTXV MAXIMUM R.

2N3791 - PNP silicon power transistors (Motorola)
2N3789 thru 2N3792 (SILICON) CASEll~. (TO-3) ~ PNP silicon power transistors for medium-speed switching and amplifier applications. Complement to N.

2N3791 - Bipolar PNP Device (Semelab Plc)
2N3791 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP.