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2N3790 Datasheet - Toshiba

2N3790 Silicon PNP Transistor

2N3790 Features

* . High Gain and Excellent hFE Linearity: hFE=15(Min.) @ VC E=-2V, Ic=-3A Low Saturation Voltage: VcE(sat)=-1.0V(Max.) @ I C=-4A, Ib=-0.4A Unit in mm MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Peak Bas

2N3790 Datasheet (85.32 KB)

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Datasheet Details

Part number:

2N3790

Manufacturer:

Toshiba ↗

File Size:

85.32 KB

Description:

Silicon pnp transistor.

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2N3790 Silicon PNP Transistor Toshiba

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