2N3789 SILICON PNP Transistor

Toshiba

Description

SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER, SWITCHING CIRCUIT AND REGULATOR APPLICATIONS..

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Datasheet Specifications

Part number: 2N3789
Manufacturer: Toshiba ↗
File Size: 85.57 KB
Datasheet: 2N3789-Toshiba.pdf
Description: SILICON PNP Transistor

Features

* . High Gain and Excellent hFE Linearity: hFE=15 (Min. ) @ VC E=-2V, I C=-3A . Low Saturation Voltage: VCE(sat)=-1.0V (Max. ) @ Ic=-4A, I B=-0.4A Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC a Collector-Base Voltage
* Collector-Emitter Voltage 38 Emitter-Base Voltage

2N3789 Distributors

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2N3789 SILICON PNP Transistor Toshiba

Toshiba 2N3789-like datasheet