2N3789 Datasheet - Toshiba

2N3789 SILICON PNP Transistor

2N3789 Features

* . High Gain and Excellent hFE Linearity: hFE=15 (Min.) @ VC E=-2V, I C=-3A . Low Saturation Voltage: VCE(sat)=-1.0V (Max.) @ Ic=-4A, I B=-0.4A Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC a Collector-Base Voltage

* Collector-Emitter Voltage 38 Emitter-Base Voltage

2N3789 Datasheet (85.57 KB)

2N3789 Datasheet Preview — Preview of 2N3789 PDF

Datasheet Details

Part number:

2N3789

Manufacturer:

Toshiba ↗

File Size:

85.57 KB

Description:

Silicon pnp transistor.

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2N3789 SILICON PNP Transistor Toshiba

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