2N3789 Datasheet, Transistor, Toshiba

2N3789 Features

• Transistor . High Gain and Excellent hFE Linearity: hFE=15 (Min.) @ VC E=-2V, I C=-3A . Low Saturation Voltage: VCE(sat)=-1.0V (Max.) @ Ic=-4A, I B=-0.4A Unit in mm MAXIMUM RATINGS (Ta=25°C)

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Part number:

2N3789

Manufacturer:

Toshiba ↗

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85.57kb

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📄 Datasheet

Description:

Silicon pnp transistor.

2N3789 Application

• Applications FEATURES . High Gain and Excellent hFE Linearity: hFE=15 (Min.) @ VC E=-2V, I C=-3A . Low Saturation Voltage: VCE(sat)=-1.0V (Max.)

TAGS

2N3789

Toshiba

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