| Part number | 2N3789 |
|---|---|
| Download | 2N3789 Datasheet (PDF) |
| File Size | 184.06 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
Central Semiconductor |
2N3789 | PNP POWER TRANSISTORS |
Motorola Semiconductor |
2N3789 | PNP Transistor |
Seme LAB |
2N3789 | Bipolar PNP Device |
Comset Semiconductor |
2N3789 | EPITAXIAL-BASE TRANSISTORS |
Toshiba |
2N3789 | SILICON PNP Transistor |
·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for medium-speed switching and amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)...
