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SILICON NPN TRIPLE DIFFUSED TYPE
33
2N3716
GENERAL PURPOSE POWER TRANSISTOR.
POWER REGULATOR, SWITCHING AND SOLENOID
DRIVE APPLICATIONS.
FEATURES
. High Gain at High Current . Low Saturation Voltage : VcE(sat)=0. 8V
@ IC=5A, IB=0.5A . Excellent Area of Safe Operatings
Unit in mm
MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Thermal Resistance Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO ic IB
PC jc
L stg
RATING 100 80
UNIT
10
150 1.17 200
-65-200
'C/W
1. BASE 2. EMITTER
COLLECTOR (CASE)
TO—2 4MA/T0—
EIAJ TOSHIBA
TC— 3 , TB— 2— 21D1A
Weight : 12.
2N3716 Datasheet
