Download the 2N3716 datasheet PDF. This datasheet also covers the 2N3713 variant, as both devices belong to the same silicon npn transistors family and are provided as variant models within a single manufacturer datasheet.
The CENTRAL SEMICONDUCTOR 2N3713, 2N3714, 2N3715, and 2N3716 are silicon NPN power transistors manufactured by the epitaxial-base process, mounted in a hermetically sealed metal package designed for medium speed switching and amplifier applications.
| Part number | 2N3716 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 283.07 KB |
| Description | SILICON NPN TRANSISTORS |
| Datasheet |
 2N3716 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| 2N3716 | NPN High Power Silicon Transistor | VPT |
| 2N3716 | 10 AMPERE POWER TRANSISTORS | Motorola Inc |
| 2N3716 | Bipolar NPN Device | Seme LAB |
| 2N3716 | GENERAL PURPOSE POWER TRANSISTOR | Toshiba |
| 2N3716 | EPITAXIAL-BASE TRANSISTORS | Comset Semiconductor |
| Part Number | Description |
|---|---|
| 2N3713 | SILICON NPN TRANSISTORS |
| 2N3714 | SILICON NPN TRANSISTORS |
| 2N3715 | SILICON NPN TRANSISTORS |
| 2N3700 | NPN TRANSISTORS |
| 2N3701 | NPN TRANSISTORS |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
