Datasheet Details
| Part number | 2N3716 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 283.07 KB |
| Description | SILICON NPN TRANSISTORS |
| Datasheet | 2N3716 2N3713 Datasheet (PDF) |
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Overview: 2N3713 2N3715 2N3714 2N3716 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i .
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | 2N3716 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 283.07 KB |
| Description | SILICON NPN TRANSISTORS |
| Datasheet | 2N3716 2N3713 Datasheet (PDF) |
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: The CENTRAL SEMICONDUCTOR 2N3713, 2N3714, 2N3715, and 2N3716 are silicon NPN power transistors manufactured by the epitaxial-base process, mounted in a hermetically sealed metal package designed for medium speed switching and amplifier applications.
MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg JC 2N3713 2N3715 80 2N3714 2N3716 100 60 80 7.0 10 4.0 150 -65 to +200 1.17 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICEV VCE=Rated VCBO, VBE=1.5V ICEV VCE=Rated VCEO, VBE=1.5V, TC=150°C IEBO VEB=7.0V BVCEO IC=200mA (2N3713, 2N3715) 60 BVCEO IC=200mA (2N3714, 2N3716) 80 VCE(SAT) IC=5.0A, IB=0.5A (2N3713, 2N3714) VCE(SAT) IC=5.0A, IB=0.5A (2N3715, 2N3716) VBE(SAT) IC=5.0A, IB=0.5A (2N3713, 2N3714) VBE(SAT) IC=5.0A, IB=0.5A (2N3715, 2N3716) VBE(ON) VCE=2.0V, IC=3.0A hFE VCE=2.0V, IC=1.0A (2N3713, 2N3714) 40 hFE VCE=2.0V, IC=1.0A (2N3715, 2N3716) 50 hFE VCE=2.0V, IC=3.0A (2N3713, 2N3714) 15 hFE VCE=2.0V, IC=3.0A (2N3715, 2N3716) 30 fT VCE=10V, IC=0.5A, f=1.0MHz 4.0 tr IC=5.0A, IB1=IB2=0.5A 0.4 ts IC=5.0A, IB1=IB2=0.5A 0.3 tf IC=5.0A, IB1=IB2=0.5A 0.4 MAX 1.0 10 5.0 1.0 0.8 2.0 1.5 1.5 120 150 UNITS V V V A A W °C °C/W UNITS mA mA mA V V V V V V V MHz μs μs μs R2 (18-June 2013) 2N3713 2N3715 2N3714 2N3716 SILICON NPN TRANSISTORS TO-3 CASE - MECHANICAL OUTLINE R2 LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER w w w.
c e n t r a l s e m i .
Compare 2N3716 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N3716 | NPN High Power Silicon Transistor | VPT |
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2N3716 | 10 AMPERE POWER TRANSISTORS | Motorola Inc |
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2N3716 | Bipolar NPN Device | Seme LAB |
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2N3716 | GENERAL PURPOSE POWER TRANSISTOR | Toshiba |
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2N3716 | EPITAXIAL-BASE TRANSISTORS | Comset Semiconductor |
| Part Number | Description |
|---|---|
| 2N3713 | SILICON NPN TRANSISTORS |
| 2N3714 | SILICON NPN TRANSISTORS |
| 2N3715 | SILICON NPN TRANSISTORS |
| 2N3700 | NPN TRANSISTORS |
| 2N3701 | NPN TRANSISTORS |
| 2N3702 | PNP Transistor |
| 2N3703 | PNP Transistor |
| 2N3724 | NPN SILICON TRANSISTOR |
| 2N3725 | NPN SILICON TRANSISTOR |
| 2N3725A | NPN SILICON TRANSISTOR |