2N3791
Key Features
- High Gain and Excellent hpg Linearity: hFE=30 (Min.) @ V CE=-2V, I C=-3A
- Low Saturation Voltage: VcE(sat)=-1.0V (Max.) @ IC=-5A, Ib=-0.5A Unit in mm 025.OUAX
- Part: 2N3791
- Description: SILICON PNP Transistor
- Category: Transistor
- Manufacturer: Toshiba
- Size: 85.53 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 2N3799A | Motorola Semiconductor | PNP SILICON ANNULAR TRANSISTORS |
| 2N3798A | Motorola Semiconductor | PNP SILICON ANNULAR TRANSISTORS |
| 2N3792 | VPT Components | PNP High Power Silicon Transistor |
| 2N3792 | NTE Electronics | Silicon PNP Transistor |
| 2N3792 | Inchange Semiconductor | PNP Transistor |