2N3791 - SILICON PNP Transistor

Toshiba

Key Features

. High Gain and Excellent hpg Linearity: hFE=30 (Min. ) @ V CE=-2V, I C=-3A . Low Saturation Voltage: VcE(sat)=-1.0V (Max. ) @ IC=-5A, Ib=-0.5A Unit in mm 025.OUAX.

2N3791 silicon pnp transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2N3791
Manufacturer	Toshiba
File Size	85.53 KB
Description	SILICON PNP Transistor
Datasheet	2N3791 Datasheet

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Full PDF Text Transcription (Reference)

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: SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER, SWITCHING CIRCUIT AND REGULATOR APPLICATIONS FEATURES . High Gain and Excellent hpg Linearity: hFE=30 (Min.) @ V CE=-2V, I C=-3A . Low Saturation Voltage: VcE(sat)=-1.0V (Max.) @ IC=-5A, Ib=-0.5A Unit in mm 025.OUAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Peak Base Current Collector Power Dissipation (Tc=25°C)Derate Linearly above 25 C Junction Temperature * Storage Temperature Range VcBO VCEO VEBO ic I CM IB Ti Lstg -60 -60 -7 -10 -15 -4 150 0.86 W/°C 200 -65 ^200 1. BASE 2. EMITTER COLLECTOR (CASE) EIAJ TOSHIBA T0-204MA/T0-3 TC-3. TB-3 2-21D1A Weight : 12.