Datasheet Summary
:
SILICON PNP TRIPLE DIFFUSED TYPE
POWER AMPLIFIER, SWITCHING CIRCUIT AND REGULATOR APPLICATIONS.
Features
. High Gain and Excellent hFE Linearity: hFE=15(Min.) @ VC E=-2V, Ic=-3A
Low Saturation Voltage: VcE(sat)=-1.0V(Max.)
@ I C=-4A, Ib=-0.4A
Unit in mm
MAXIMUM RATINGS (Ta=25 C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Peak
Base Current
Collector Power Dissipation (Tc=25°C)Derate Linearly above 25 & C
Junction Temperature
% Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC I CM IB
L Stg
RATING -80 -80 -7 -10 -15 -4 150 0.86 200
-65~ 200
UNIT u w/ c
1. BASE 2. EMITTER
COLLECTOR (CASE)
TO- 2 4MA/T0-
TC-...
