2N3791 Datasheet, Transistor, Toshiba

2N3791 Features

• Transistor . High Gain and Excellent hpg Linearity: hFE=30 (Min.) @ V CE=-2V, I C=-3A . Low Saturation Voltage: VcE(sat)=-1.0V (Max.) @ IC=-5A, Ib=-0.5A Unit in mm 025.OUAX. MAXIMUM RATINGS (

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2N3791

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Toshiba ↗

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📄 Datasheet

Description:

Silicon pnp transistor.

2N3791 Application

• Applications FEATURES . High Gain and Excellent hpg Linearity: hFE=30 (Min.) @ V CE=-2V, I C=-3A . Low Saturation Voltage: VcE(sat)=-1.0V (Max.)

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2N3791

Toshiba

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