Datasheet4U Logo Datasheet4U.com

2N4126 Silicon PNP Transistor

2N4126 Description

SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2N4126 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS.Unit in mm .

2N4126 Features

* . Low Leakage Current : IcBO=-50nA(Max. ) @ VcB=-20V lEBO=-50nA(Max. ) @ Veb=-3V . Low Saturation Voltage
* ' vCE(sat)=-0-4V(Max. ) @ I C =-50mA, I B =-5mA . Low Collector Output Capacitance : C b=4.5pF(Max. ) @ v C B=-5V . Complementary to 2N4124 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collec

📥 Download Datasheet

Preview of 2N4126 PDF
datasheet Preview Page 2

📁 Related Datasheet

  • 2N4123 - NPN Transistors (ON Semiconductor)
  • 2N4124 - NPN general purpose transistor (NXP)
  • 2N4125 - PNP EPITAXIAL SILICON TRANSISTOR (Samsung semiconductor)
  • 2N4100 - Dual NPN Amplifier (Solid State)
  • 2N4101 - 5-A SILICON CONTROLLED RECTIFIERS (ETC)
  • 2N4102 - Thyristors (RCA)
  • 2N4103 - Thyristors (RCA)
  • 2N4111 - NPN Transistor (INCHANGE)

📌 All Tags

Silicon PNP Transistor Toshiba
Toshiba 2N4126-like datasheet