2N4126 Overview
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2N4126 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS.
2N4126 Key Features
- 55 ~150
- In accordance with JEDEC registration data
- MAX. -50 -50
- 0.95 V
| Part number | 2N4126 |
|---|---|
| Datasheet | 2N4126-Toshiba.pdf |
| File Size | 55.09 KB |
| Manufacturer | Toshiba |
| Description | Silicon PNP Transistor |
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SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2N4126 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2N4126 | Small Signal Low Noise Transistors | TAITRON |
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2N4126 | Small Signal Transistor | Vishay |
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2N4126 | PNP general purpose transistor | NXP |
| 2N4126 | PNP EPITAXIAL SILICON TRANSISTOR | Samsung semiconductor | |
| 2N4126 | PNP General Purpose Amplifier | Fairchild Semiconductor |
| Part Number | Description |
|---|---|
| 2N4123 | Silicon NPN Transistor |
| 2N4124 | Silicon NPN Transistor |
| 2N4125 | Silicon PNP Transistor |
| 2N4398 | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR |
| 2N4399 | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR |
| 2N4400 | Silicon NPN Transistor |