2N4126 Silicon PNP Transistor

Toshiba

Description

SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2N4126 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS.Unit in mm .

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Datasheet Specifications

Part number: 2N4126
Manufacturer: Toshiba ↗
File Size: 55.09 KB
Datasheet: 2N4126-Toshiba.pdf
Description: Silicon PNP Transistor

Features

* . Low Leakage Current : IcBO=-50nA(Max. ) @ VcB=-20V lEBO=-50nA(Max. ) @ Veb=-3V . Low Saturation Voltage
* ' vCE(sat)=-0-4V(Max. ) @ I C =-50mA, I B =-5mA . Low Collector Output Capacitance : C b=4.5pF(Max. ) @ v C B=-5V . Complementary to 2N4124 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collec

2N4126 Distributors

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2N4126 Silicon PNP Transistor Toshiba

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