| Part Number | 2N4126 Datasheet |
|---|---|
| Manufacturer | General Semiconductor |
| Overview |
2N4126
Small Signal Transistors (PNP)
TO-92
.181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6)
FEATURES ♦ PNP Silicon Epitaxial Transistor
for switching and amplifier applications. Especially suit-abl.
* PNP Silicon Epitaxial Transistor for switching and amplifier applications. Especially suit-able for AF-driver and low-power output stages. * As complementary type, the NPN transistor 2N4124 is recommended. max. ∅ .022 (0.55) .098 (2.5) E B C MECHANICAL DATA Case: TO-92 Plastic Package Weight: a. |
2N4126 Datasheet and Specifications PDF
The 2N4126 is a Small Signal Transistors.
Key Specifications
| Package | TO-92-3 |
|---|---|
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | 2N4126 Datasheet |
|---|---|
| Description | PNP general purpose transistor |
| Manufacturer | NXP Semiconductors |
| Overview |
DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complement: 2N4124.
2 3
1 2 3
MAM280
Fig.1
Simplified outline (TO-92; SOT54) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO VCEO .
* Low current (max. 200 mA) * Low voltage (max. 25 V). APPLICATIONS * General purpose switching and amplification, e.g. small-signal audio-frequency applications. 1 handbook, halfpage 2N4126 PINNING PIN 1 2 3 collector base emitter DESCRIPTION DESCRIPTION PNP transistor in a TO-92; SOT54 plastic p. |
| Part Number | 2N4126 Datasheet |
|---|---|
| Description | PNP EPITAXIAL SILICON TRANSISTOR |
| Manufacturer | Samsung Semiconductor |
| Overview | . . |
| Part Number | 2N4126 Datasheet |
|---|---|
| Description | PNP General Purpose Amplifier |
| Manufacturer | Fairchild Semiconductor |
| Overview | 2N4126 / MMBT4126 Discrete POWER & Signal Technologies 2N4126 MMBT4126 C E C BE TO-92 SOT-23 Mark: ZF B PNP General Purpose Amplifier This device is designed for general purpose amplifier and s. aracteristics Symbol PD RθJC RθJA TA= 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25° C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N4126 625 5.0 83.3 200 Max *MMBT4126 350 2.8 357 Units mW mW/ °C °C/W °C/W *Device mounted o. |