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2SC3709A Datasheet - Toshiba

2SC3709A Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3709A 2SC3709A High-Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) High-speed switching: tstg = 1.0 μs (typ.) Complementary to 2SA1451A Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V Collector current IC 12 A Base .

2SC3709A_Toshiba.pdf

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Datasheet Details

Part number:

2SC3709A

Manufacturer:

Toshiba ↗

File Size:

141.00 KB

Description:

Silicon npn transistor.

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2SC3709A 2SC3709A Silicon NPN Transistor Toshiba

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