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2SC3709A Silicon NPN Transistor

2SC3709A Description

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3709A 2SC3709A High-Current Switching Applications Unit: mm * Low collector.

2SC3709A Applications

* Unit: mm
* Low collector saturation voltage: VCE (sat) = 0.4 V (max)
* High-speed switching: tstg = 1.0 μs (typ. )
* Complementary to 2SA1451A Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter v

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Silicon NPN Transistor Toshiba
Toshiba 2SC3709A-like datasheet