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2SC382TM - SILICON NPN TRANSISTOR

2SC382TM Description

SILICON NPN EPITAXIAL PLANAR TYPE 2SC382TM TV 1ST, 2ND PICTURE IF AMPLIFIER APPLICATIONS..

2SC382TM Features

* High Gain : Gpe=35dB(Typ, ) (f=45MHz)
* Excellent Forward AGC Characteristic. 5.1 MAX. Unit in mm M 0.55MAX. 0.45 00 00 MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Po

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SILICON NPN TRANSISTOR Toshiba
Toshiba 2SC382TM-like datasheet