* Adoption of FBET and MBIT processes.
* High DC current gain (hFE=800 to 3200).
* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
* High VEBO (VEBO≥15V).
* Small Cob (Cob=2.0pF typ). Package Dimensions unit:mm 2033 [2SC3820] Specifications Absolute Maximum Rating
2SC3820
Sanyo Semicon Device
85.63 KB
Npn transistor.
Ordering number:EN2544B NPN Epitaxial Planar Type Silicon Transistor 2SC3820 High hFE, AF Amplifier Applications Applications Drivers, muting .
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