2SC3820 Datasheet - Sanyo Semicon Device

2SC3820 NPN Transistor

2SC3820 Features

* Adoption of FBET and MBIT processes.

* High DC current gain (hFE=800 to 3200).

* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).

* High VEBO (VEBO≥15V).

* Small Cob (Cob=2.0pF typ). Package Dimensions unit:mm 2033 [2SC3820] Specifications Absolute Maximum Rating

Datasheet Details

2SC3820

Sanyo Semicon Device

85.63 KB

Npn transistor.

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2SC3820 NPN Transistor Sanyo Semicon Device

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