* Large current capacity (IC=2A).
* Adoption of MBIT process.
* High DC current gain (hFE=800 to 3200).
* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
* High VEBO (VEBO≥15V). Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage
2SC3807
Sanyo Semicon Device
183.61 KB
Npn epitaxial planar silicon transistor.
www.DataSheet.co.kr Ordering number:EN2018A NPN Epitaxial Planar Silicon Transistor 2SC3807 High hFE, Low-Frequency General-Purpose Amplifier Appli.
📁 Related Datasheet
2SC380 NPN Transistor (HAOCHANG)
2SC380 NPN Transistor (SEMTECH)
2SC3802K Epitaxial Planar NPN Silicon Transistor (Rohm)
2SC3803 Silicon NPN Transistor (Toshiba Semiconductor)
2SC3803 Transistor (Kexin)
2SC3805 Silicon NPN Transistor (Toshiba Semiconductor)
2SC3807 TRANSISTOR (WEJ)
2SC3807 Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
2SC3807 NPN Transistor (JCET)
2SC3807 SILICON NPN TRANSISTOR (Foshan Eming Electronics)
