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2SC3807 - NPN Epitaxial Planar Silicon Transistor

2SC3807 Description

www.DataSheet.co.kr Ordering number:EN2018A NPN Epitaxial Planar Silicon Transistor 2SC3807 High hFE, Low-Frequency General-Purpose Amplifier Appli.

2SC3807 Features

* Large current capacity (IC=2A).
* Adoption of MBIT process.
* High DC current gain (hFE=800 to 3200).
* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
* High VEBO (VEBO≥15V). Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage

2SC3807 Applications

* Applications

📥 Download Datasheet

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Datasheet Details

Part number
2SC3807
Manufacturer
Sanyo Semicon Device
File Size
183.61 KB
Datasheet
2SC3807_SanyoSemiconDevice.pdf
Description
NPN Epitaxial Planar Silicon Transistor

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NPN Epitaxial Planar Silicon Transistor Sanyo Semicon Device
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