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2SC3807C - NPN Epitaxial Planar Silicon Transistor

Datasheet Summary

Features

  • Large current capacity (IC=2A). Adoption of MBIT process. High DC current gain (hFE=1000 to 2000). Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). High VEBO (VEBO≥17V). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VE.

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Datasheet Details

Part number 2SC3807C
Manufacturer Sanyo Semicon Device
File Size 72.45 KB
Description NPN Epitaxial Planar Silicon Transistor
Datasheet download datasheet 2SC3807C Datasheet
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www.DataSheet4U.com Ordering number : ENA0439 2SC3807C SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC3807C Applications • 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Low-frequency general-purpose amplifiers, drivers. Features • • • • • Large current capacity (IC=2A). Adoption of MBIT process. High DC current gain (hFE=1000 to 2000). Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). High VEBO (VEBO≥17V).
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