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2SC3807C - NPN Epitaxial Planar Silicon Transistor

2SC3807C Description

www.DataSheet4U.com Ordering number : ENA0439 2SC3807C SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC3807C Applicati.

2SC3807C Features

* Large current capacity (IC=2A). Adoption of MBIT process. High DC current gain (hFE=1000 to 2000). Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). High VEBO (VEBO≥17V). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Colle

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Datasheet Details

Part number
2SC3807C
Manufacturer
Sanyo Semicon Device
File Size
72.45 KB
Datasheet
2SC3807C_SanyoSemiconDevice.pdf
Description
NPN Epitaxial Planar Silicon Transistor

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NPN Epitaxial Planar Silicon Transistor Sanyo Semicon Device
Sanyo Semicon Device 2SC3807C-like datasheet