Datasheet4U Logo Datasheet4U.com

2SC3807C Datasheet - Sanyo Semicon Device

2SC3807C - NPN Epitaxial Planar Silicon Transistor

2SC3807C Features

* Large current capacity (IC=2A). Adoption of MBIT process. High DC current gain (hFE=1000 to 2000). Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). High VEBO (VEBO≥17V). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Colle

2SC3807C_SanyoSemiconDevice.pdf

Preview of 2SC3807C PDF
2SC3807C Datasheet Preview Page 2 2SC3807C Datasheet Preview Page 3

Datasheet Details

Part number:

2SC3807C

Manufacturer:

Sanyo Semicon Device

File Size:

72.45 KB

Description:

Npn epitaxial planar silicon transistor.

📁 Related Datasheet

📌 All Tags