* Large current capacity (IC=2A). Adoption of MBIT process. High DC current gain (hFE=1000 to 2000). Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). High VEBO (VEBO≥17V). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Colle
2SC3807C
Sanyo Semicon Device
72.45 KB
Npn epitaxial planar silicon transistor.
www.DataSheet4U.com Ordering number : ENA0439 2SC3807C SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC3807C Applicati.
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