* Large current capacity (IC=2A). Adoption of MBIT process. High DC current gain (hFE=1000 to 2000). Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). High VEBO(VEBO≥15V). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collec
2SC3807MP Datasheet (71.31 KB)
2SC3807MP
Sanyo Semicon Device
71.31 KB
Npn epitaxial planar silicon transistor.
www.DataSheet4U.com Ordering number : ENA0629 2SC3807MP SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC3807MP Applica.
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