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2SC3808 - NPN Epitaxial Planar Silicon Transistor

2SC3808 Description

Ordering number:EN2105A NPN Epitaxial Planar Silicon Transistor 2SC3808 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications .

2SC3808 Features

* Large current capacity (IC=2A).
* Adoption of MBIT process.
* High DC current gain (hFE=800 to 3200).
* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
* High VEBO (VEBO≥15V). Package Dimensions unit:mm 2043A [2SC3808] Specifications Absolute Maximum Ratings at

2SC3808 Applications

* Applications

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Datasheet Details

Part number
2SC3808
Manufacturer
Sanyo Semicon Device
File Size
86.27 KB
Datasheet
2SC3808_SanyoSemiconDevice.pdf
Description
NPN Epitaxial Planar Silicon Transistor

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NPN Epitaxial Planar Silicon Transistor Sanyo Semicon Device
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