2SC3808 Datasheet - Sanyo Semicon Device

2SC3808 NPN Epitaxial Planar Silicon Transistor

2SC3808 Features

* Large current capacity (IC=2A).

* Adoption of MBIT process.

* High DC current gain (hFE=800 to 3200).

* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).

* High VEBO (VEBO≥15V). Package Dimensions unit:mm 2043A [2SC3808] Specifications Absolute Maximum Ratings at

Datasheet Details

2SC3808

Sanyo Semicon Device

86.27 KB

Npn epitaxial planar silicon transistor.

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