2SC3808 - NPN Epitaxial Planar Silicon Transistor

Product Overview

Sanyo Semicon Device

Part number	2SC3808
Manufacturer	Sanyo Semicon Device
File Size	86.27 KB
Description	NPN Epitaxial Planar Silicon Transistor
Datasheet	2SC3808 Datasheet
Additional preview pages of the 2SC3808 datasheet.

Large current capacity (IC=2A).
Adoption of MBIT process.
High DC current gain (hFE=800 to 3200).
Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
High VEBO (VEBO≥15V). Package Dimensions unit:mm 2043A [2SC3808] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC.

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Published: Mar 22, 2005 |