2SD664 Datasheet - Toshiba

2SD664 NPN Transistor

2SD664 Features

* High DC Current Gain : hFE=2000(Min.)(VCE=3V, I C=3A)

* Low Saturation Voltage

* V C E( S at) =1 - 5v (Max.)(I c=3A)

* Monolithic Cnstruction with Built-in Base- Emitter Shunt Resistor. Unit in mm 015.7MAX MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Vo

Datasheet Details

2SD664

113.48 KB

Npn transistor.

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