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2SK113 Datasheet - Toshiba

2SK113 Silicon N-Channel Transistor

2SK113 Features

* . High Breakdown Voltage : V(br)gdS =-50v . Low ON Resistance : rDS(ON) = 30 Q(Max. ) (2SK113-Y) . Low Leakage : I D (oFF)=100pA(Max. ) (VdS=20V) 2SK113 Unit in mm 05.8MAX. MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL RATING UNIT Gate-Drain Voltage Gate Current Drain Power Dissipation Junct

2SK113-Toshiba.pdf

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Datasheet Details

Part number:

2SK113

Manufacturer:

Toshiba ↗

File Size:

128.29 KB

Description:

Silicon n-channel transistor.

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2SK113 2SK113 Silicon N-Channel Transistor Toshiba

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