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2SK113 - Silicon N-Channel Transistor

2SK113 Description

: SILICON N CHANNEL JUNCTION TYPE (INDUSTRIAL APPLICATIONS) FOR ANALOG SWITCH,, CHOPPER AMPLIFIER AND SWITCHING CIRCUIT APPLICATIONS, .

2SK113 Features

* . High Breakdown Voltage : V(br)gdS =-50v . Low ON Resistance : rDS(ON) = 30 Q(Max. ) (2SK113-Y) . Low Leakage : I D (oFF)=100pA(Max. ) (VdS=20V) 2SK113 Unit in mm 05.8MAX. MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL RATING UNIT Gate-Drain Voltage Gate Current Drain Power Dissipation Junct

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Datasheet Details

Part number
2SK113
Manufacturer
Toshiba ↗
File Size
128.29 KB
Datasheet
2SK113-Toshiba.pdf
Description
Silicon N-Channel Transistor

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Silicon N-Channel Transistor Toshiba
Toshiba 2SK113-like datasheet