* 2.9
* 0.05 1.9±0.2 +0.2 q Low ON-resistance q Low-noise characteristics 0.95 1 0.95 3 0.4
* 0.05 +0.1 s Absolute Maximum Ratings (Ta = 25°C) Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS
2SK1103
Panasonic Semiconductor
31.79 KB
Silicon n-channel junction fet.
Silicon Junction FETs (Small Signal)
2SK1103
Silicon N-Channel Junction FET
For switching Complementary to 2SJ163
0.65±0.15
+0.2
unit: mm
0.65±0.15
.
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