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2SK1103 - Silicon N-Channel Junction FET

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Panasonic Semiconductor

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2SK1103 Silicon N-Channel Junction FET by Panasonic Semiconductor - Datasheet Preview — Datasheet preview – 2SK1103

Datasheet Details

Part number	2SK1103
Manufacturer	Panasonic Semiconductor
File Size	31.79 KB
Description	Silicon N-Channel Junction FET
Datasheet	2SK1103 Datasheet
Additional preview pages of the 2SK1103 datasheet.

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Features

2.9.
0.05 1.9±0.2 +0.2 q Low ON-resistance q Low-noise characteristics 0.95 1 0.95 3 0.4.
0.05 +0.1 s Absolute Maximum Ratings (Ta = 25°C) Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID IG PD Tch Tstg Ratings.
65 20 10 150 150.
55 to +150 Unit 0.8 2 1.45 V mA mA mW °C °C +0.2 1.1.
0.1 1: Source 2: Drain 3: Gate JEDEC: TO-236 EIAJ: SC-59 Mini Type Pack.

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Published: Mar 30, 2005 |