2SK1104 - Silicon N-Channel Junction FET
2SK1104 Features
* q Low ON-resistance q Low-noise characteristics unit: mm 4.0±0.2 3.0±0.2 0.7±0.1 s Absolute Maximum Ratings (Ta = 25°C) Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID IG PD Tch Tstg Ratings
* 65 20
