2SK147 Datasheet - Toshiba

Silicon N-Channel MOSFET

* High lyf s l : )yfsl=40mS(Typ.) (V DS =10V, VG S=0, I D SS=5mA)

* High Breakdown Voltage : VGds =- 40V

* Low Noise : NF=1.0dE (Typ . (VDS =10V, I D=5mA, f=lkHz, R=100ft)

* High Input Impedance : I GSS=-lnA (Max.) (vGS =-30V)

* High Drain Power Dissi

2SK147

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Silicon n-channel mosfet.

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2SK147 Silicon N-Channel MOSFET Toshiba

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