2SK1692 Datasheet, Mosfet, Toshiba

PDF File Details

Manufacture Logo for Toshiba
Toshiba manufacturer logo

Part number:

2SK1692

Manufacturer:

Toshiba ↗

File Size:

307.88kb

Download:

📄 Datasheet

Description:

N-channel enhancement mosfet.

Datasheet Preview: 2SK1692 📥 Download PDF (307.88kb)
Page 2 of 2SK1692 Page 3 of 2SK1692

TAGS

2SK1692
N-Channel
Enhancement
MOSFET
Toshiba

📁 Related Datasheet

2SK1690 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
Ordering number:EN4223 Features · Low ON resistance. · Ultrahigh-speed switching. N-Channel Silicon MOSFET 2SK1690 Ultrahigh-Speed Switching Applicat.

2SK1691 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
Ordering number:EN4224 Features · Low ON resistance. · Ultrahigh-speed switching. N-Channel Silicon MOSFET 2SK1691 Ultrahigh-Speed Switching Applicat.

2SK1692 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor 2SK1692 DESCRIPTION ·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS=900 (Min) ·Minimum Lot-to-Lot variat.

2SK1693 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lo.

2SK1693 - VX Series Power MOSFET (Shindengen Electric)
.

2SK1695 - VX Series Power MOSFET (Shindengen Electric)
w w w .d e e h s a t a . u t4 m o c .. .

2SK1697 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK1697 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current.

2SK1697 - Silicon N-Channel MOS FET (Renesas)
2SK1697 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V.

2SK1698 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK1698 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current.

2SK1699 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Minimum Lot-to-Lot variations for .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts