A1313 Datasheet - Toshiba

A1313 2SA1313

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1313 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications 2SA1313 Unit: mm Excellent hFE linearity: hFE (2) = 25 (min) at VCE = 6 V, IC = 400 mA High voltage: VCEO = 50 V (min) Complementary to 2SC3325 Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base volt.

A1313-Toshiba.pdf