TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications 2SA1300 Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = 1 V, IC = 4 A) Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Ra
A1300-ToshibaSemiconductor.pdf
Datasheet Details
Part number:
A1300
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
90.71 KB
Description:
2sa1300.