B1411 Datasheet - Toshiba

B1411 SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1411 Switching Applications Hammer Drive, Pulse Motor Drive Applications 2SB1411 Unit: mm High DC current gain: hFE = 1500 (min) (VCE = 3 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Em.

B1411 Datasheet (142.39 KB)