B1411 Datasheet - Toshiba

B1411, SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1411 Switching

Applications

* Hammer Drive, Pulse Motor Drive Applications 2SB1411 Unit: mm
* High DC current gain: hFE = 1500 (min) (VCE =
* 3 V, IC =
* 1 A)
* Low saturation voltage: VCE (sat) =
* 1.5 V (max) (IC =
* 1 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symb

B1411-Toshiba.pdf