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TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington)
2SB1457
Micro Motor Drive, Hammer Drive Applications Power Switching Applications Power Amplifier Applications
2SB1457
Unit: mm
• High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max)
(IC = −1 A, IB = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO
−100
V
VCEO
−100
V
VEBO
−8
V
IC (DC)
−2
A
IC (Pulse)
−3
A
IB
−0.5
A
PC
900
mW
Tj
150
°C
Tstg
−55 to 150
°C
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.
B1457 Datasheet
