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BAV99 - Silicon Epitaxial Planar Switching Diodes

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Datasheet Details

Part number BAV99
Manufacturer Toshiba
File Size 217.64 KB
Description Silicon Epitaxial Planar Switching Diodes
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Switching Diodes Silicon Epitaxial Planar BAV99 1. Applications • Ultra-High-Speed Switching 2. Packaging and Internal Circuit BAV99 1: Anode 1 2: Cathode 2 3: Cathode 1/Anode 2 SOT23 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage Reverse voltage VRM VR 100 V 100 Peak forward current Average rectified current Non-repetitive peak forward surge current IFM IO IFSM (Note 1) (Note 2) (Note 3) 500 mA 215 mA 2A Power dissipation PD (Note 4) 150 mW 320 Junction temperature Tj 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
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