BAV99 Datasheet | Toshiba

Switching Diodes Silicon Epitaxial Planar 1. Applications - Ultra-High-Speed Switching 2. Packaging and Internal Circuit 1: Anode 1 2: Cathode 2 3: Cathode 1/Anode 2 SOT23 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage Reverse voltage VRM VR 100 V 100 Peak forward current Average rectified current Non-repetitive peak forward surge current IFM IO IFSM (Note 1) (Note 2) (Note 3) 500 m A 215 m A 2A Power dissipation PD (Note 4) 150 m W 320 Junction temperature Tj 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the...