The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Switching Diodes Silicon Epitaxial Planar
BAV99W
1. Applications
• High-Speed Switching
2. Packaging and Internal Circuit
BAV99W
1: Anode 1 2: Cathode 2 3: Cathode 1/Anode 2
USM
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Rating
Unit
Peak reverse voltage
VRM
100 V
Reverse voltage
VR
100
Peak forward current
IFM (Note 1)
500 mA
Average rectified current
IO (Note 2)
150
Non-repetitive peak forward surge current
IFSM (Note 2), (Note 3)
2
A
Power dissipation
PD
100 mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
BAV99W Datasheet
