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BD233 - Silicon NPN Transistor

Features

  • . Designed for Complementary Use with BD234, BD236 and BD238 BD233 BD235 IBD237 7.9 MAX. Unit in mm.

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Other Datasheets by Toshiba
  • BD234 - Silicon PNP Transistor
  • BD235 - Silicon NPN Transistor
  • BD236 - Silicon PNP Transistor
  • BD237 - Silicon NPN Transistor
  • BD238 - Silicon PNP Transistor

Full PDF Text Transcription

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: SILICON NPN EPITAXIAL BASE MESA TYPE AUDIO POWER AMPLIFIER APPLICATIONS. VERTICAL DEFLECTION OUTPUT APPLICATION IN TV. FEATURES . Designed for Complementary Use with BD234, BD236 and BD238 BD233 BD235 IBD237 7.9 MAX. Unit in mm MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage BD233 BD235 BD237 Collector-Emitter Voltage BD233 BD235 BD237 Emitter-Base Voltage Collector Current DC Peak Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO Vebo IC ICM IB PC L stg RATING 45 60 100 45 60 80 25 150 -55-150 UNIT JEDEC 1. EMITTER 2. COLLECTOR (HEAT SINK) 3. BASE TO— 126 TOSHIBA Weight : 0.
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