BD233 - EPITAXIAL SILICON POWER TRANSISTORS

CDIL

General Description

Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage (RBE=1KΩ) Emitter Base Voltage Collector Current Collector Peak Current Total Dissipation @ TC=25ºC Total Dissipation @ Ta=25ºC Derate above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCBO VCEO VCER VEBO IC

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BD233 epitaxial silicon power transistors by CDIL - Datasheet Preview

Datasheet Details

Part number	BD233
Manufacturer	CDIL
File Size	94.54 KB
Description	EPITAXIAL SILICON POWER TRANSISTORS
Datasheet	BD233 Datasheet

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Other Datasheets by CDIL

Part Number	Description
BD234	EPITAXIAL SILICON POWER TRANSISTORS
BD235	EPITAXIAL SILICON POWER TRANSISTORS
BD236	EPITAXIAL SILICON POWER TRANSISTORS
BD237	EPITAXIAL SILICON POWER TRANSISTORS
BD238	EPITAXIAL SILICON POWER TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS ECB BD233 BD235 BD237 NPN BD234 BD236 BD238 PNP TO126 Plastic Package Intended for use in Medium Power Linear Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage (RBE=1KΩ) Emitter Base Voltage Collector Current Collector Peak Current Total Dissipation @ TC=25ºC Total Dissipation @ Ta=25ºC Derate above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCBO VCEO VCER VEBO IC ICM PD PD Tj, Tstg BD233 BD234 45 45 45 BD235 BD236 60 60 60 5.0 2.0 6.0 25 1.