BD234 Datasheet PDF | Continental Device India

Continental Device India BD234

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.

Part No.	BD234
Datasheet	BD234 Download
Manufacturer	Continental Device India
Description	EPITAXIAL SILICON POWER TRANSISTORS
Buy	Stock & Price

APPLICATIONS

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage (RBE=1KΩ) Emitter Base Voltage Collector Current Collector Peak Current Total Dissipation @ TC=25ºC Total Dissipation @ Ta=25ºC Derate above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCBO VCEO VCER VEBO IC ICM PD PD Tj, Tstg BD233 BD234 45 45 45 BD235 BD236 60 60 60 5.0 2.0 6.0 25 1.25 10 BD237 BD238 100 80 100 - 65 to +150 UNIT V V V V A A W W mW/ ºC ºC THERMAL CHARACTERISTICS Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) 5.0 ºC/W 100 ºC/W

ELECTRICAL CHARACTERISTICS

(TC=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION MIN Collector Cut off Current ICBO VCB=45V, IE=0 BD233/234 VCB=60V, IE=0 BD235/236 VCB=100V, IE=0 BD237/238 Emitter Cut off Current Collector Emitter Sustaining Voltage Collector Emitter Saturation Voltage Base Emitter Voltage TC = 150ºC VCB=45V, IE=0 BD233/234 VCB=60V, IE=0 BD235/236 VCB=...

BD234 Datasheets by Manufacturer

5 datasheets

Part Number	Manufacturer
BD234	STMicroelectronics
BD234	Fairchild Semiconductor
BD234	Central Semiconductor
BD234	Toshiba
BD234	onsemi