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BD234 - EPITAXIAL SILICON POWER TRANSISTORS

Download the BD234 datasheet PDF. This datasheet also covers the BD233 variant, as both devices belong to the same epitaxial silicon power transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage (RBE=1KΩ) Emitter Base Voltage Collector Current Collector Peak Current Total Dissipation @ TC=25ºC Total Dissipation @ Ta=25ºC Derate above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCBO VCEO VCER VEBO IC

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BD233-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BD234
Manufacturer CDIL
File Size 94.54 KB
Description EPITAXIAL SILICON POWER TRANSISTORS
Datasheet download datasheet BD234 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS ECB BD233 BD235 BD237 NPN BD234 BD236 BD238 PNP TO126 Plastic Package Intended for use in Medium Power Linear Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage (RBE=1KΩ) Emitter Base Voltage Collector Current Collector Peak Current Total Dissipation @ TC=25ºC Total Dissipation @ Ta=25ºC Derate above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCBO VCEO VCER VEBO IC ICM PD PD Tj, Tstg BD233 BD234 45 45 45 BD235 BD236 60 60 60 5.0 2.0 6.0 25 1.