Continental Device India BD237
EPITAXIAL SILICON POWER TRANSISTORS
| Part No. | BD237 |
|---|---|
| Datasheet | BD237 Download |
| Manufacturer |  Continental Device India |
| Description | EPITAXIAL SILICON POWER TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage (RBE=1KΩ) Emitter Base Voltage Collector Current Collector Peak Current Total Dissipation @ TC=25ºC Total Dissipation @ Ta=25ºC Derate above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCBO VCEO VCER VEBO IC ICM PD PD Tj, Tstg BD233 BD234 45 45 45 BD235 BD236 60 60 60 5.0 2.0 6.0 25 1.25 10 BD237 BD238 100 80 100 - 65 to +150 UNIT V V V V A A W W mW/ ºC ºC THERMAL CHARACTERISTICS Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) 5.0 ºC/W 100 ºC/WELECTRICAL CHARACTERISTICS
(TC=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION Collector Cut
