Motorola BD237
Plastic Medium Power Silicon NPN Transistor
| Part No. | BD237 |
|---|---|
| Datasheet | BD237 Download |
| Manufacturer |  Motorola |
| Description | Plastic Medium Power Silicon NPN Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
2.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 25 WATTS Rating Symbol VCEO VCBO VEBO IC IB Value 80 Unit Vdc Vdc Vdc Adc Adc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Base Current 100 5.0 2.0 1.0 25 Total Device Dissipation @ TC = 25_C Operating and Storage Junction Temperature Range PD Watts TJ, Tstg – 55 to + 150 Plastic Medium Power Silicon NPN Transistor BD237 _C THERMAL CHARACTERISTICS Characteristic Symbol θJC Max 5.0 Unit Thermal Resistance, Junction to Case _C/W CASE 77–08 TO–225AA TYPEELECTRICAL CHARACTERISTICS
(TC = 25_C unless otherwise noted) Characteristic Collector–Emitter Sustaining Voltage* (IC = 0.1 Adc, IB = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Symbol Min 80 — — Max — Unit Vdc V(BR)CEO ICBO IEBO 0.1 1.0 mAdc mAdc DC Current Gain (IC = 0.15 A, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) hFE1 hFE2 40 25 — — — — Collector–Emitter Saturation Voltage*...
