* . High Breakdown Voltage : VcES = 750V . Low Saturation Voltage : V CE ( sat )=5V(Max.) at Ic=4A, Ifi=lA
* High speed : tf=0.15ys (Typ.) Unit in mm s025OMAX. Zfel.0 MAX. , +ao9 01.0
* a 03 TJT-l- 30.2±Q2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Emitter Voltage
BU126
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Silicon npn transistor.
: SILICON NPN TRIPLE DIFFUSED MESA TYPE 33 HIGH VOLTAGE NPN SILICON POWER TRANSISTOR INTENDED FOR USE IN THE SWITCHED MODE POWER SUPPLY OF TELEVISIO.
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