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BU120 - Silicon NPN Power Transistor

BU120 Description

isc Silicon NPN Power Transistors BU120 .
Collector-Emitter Sustaining Voltage- :VCEO(SUS) = 200V(Min). Minimum Lot-to-Lot variations for robust device performance and reliable operat.

BU120 Applications

* Designed for horizontal deflection output stage of CTV receivers and high voltalge, fast switching and industrial application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitter Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base

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Datasheet Details

Part number
BU120
Manufacturer
Inchange Semiconductor
File Size
205.53 KB
Datasheet
BU120-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor BU120-like datasheet