BU120 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistors BU120 .
Collector-Emitter Sustaining Voltage- :VCEO(SUS) = 200V(Min). Minimum Lot-to-Lot variations for robust device performance and reliable operat.

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Datasheet Specifications

Part number: BU120
Manufacturer: Inchange Semiconductor
File Size: 205.53 KB
Datasheet: BU120-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for horizontal deflection output stage of CTV receivers and high voltalge, fast switching and industrial application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitter Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base

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BU120 Silicon NPN Power Transistor Inchange Semiconductor

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