BU112 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistors BU112 .
Collector-Emitter Voltage- :VCEX(SUS) = 550V(Min. Collector Current- IC= 10A. Minimum Lot-to-Lot variations for robust device performan.

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Datasheet Specifications

Part number: BU112
Manufacturer: Inchange Semiconductor
File Size: 206.24 KB
Datasheet: BU112_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for deflection circuits applications in color TV receivers fitted with 90℃ kinescope. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitter Voltage 550 V VCEX Collector-Emitter Voltage VBE= -5V 550 V VEBO Emitter-Base Voltage 10 V IC Col

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BU112 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor BU112-like datasheet