BU104 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor BU104 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min. Low Collector Saturation Voltage- : VCE(sat)= 2. Minimum Lo.

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Datasheet Specifications

Part number: BU104
Manufacturer: Inchange Semiconductor
File Size: 207.87 KB
Datasheet: BU104_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in horizontal deflexion output stage of B/W TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 150 V VCEX Collector-Emitter Voltage VBE= -5V 400 V VEBO Emitter-Base Volta

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BU104 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor BU104-like datasheet