BU104 Datasheet, Transistor, Inchange Semiconductor

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BU104

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Inchange Semiconductor

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207.87kb

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📄 Datasheet

Description:

Silicon npn power transistor.

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.)

Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max.

BU104 Application

• Applications
• Designed for use in horizontal deflexion output stage of B/W TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE

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BU104

Inchange Semiconductor

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