BU113 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistors BU113 .
Collector-Emitter Voltage- :VCEX(SUS) = 700V(Min. Collector Current- IC= 10A. Minimum Lot-to-Lot variations for robust device performan.

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Datasheet Specifications

Part number: BU113
Manufacturer: Inchange Semiconductor
File Size: 204.46 KB
Datasheet: BU113_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in horizontal deflection output state of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitter Voltage 700 V VCEX Collector-Emitter Voltage VBE= -5V 700 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Co

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BU113 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor BU113-like datasheet