BU100 Silicon NPN Power Transistors

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min. Low Collector Saturation Voltage- : VCE(sat)= 3. Minimum L.

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Datasheet Specifications

Part number: BU100
Manufacturer: Inchange Semiconductor
File Size: 206.39 KB
Datasheet: BU100_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* Designed for horizontal deflection output stage of CTV receivers and high voltage,fast switching and industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Volta

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BU100 Silicon NPN Power Transistors Inchange Semiconductor

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