Datasheet4U Logo Datasheet4U.com

BU105 - Silicon NPN Power Transistor

BU105 Description

isc Silicon NPN Power Transistor BU105 .
High Voltage-VCER= 1300V(Min. Collector-Emitter Saturation Voltage- : VCE(sat)= 5. Minimum Lot-to-Lot variations for.

BU105 Applications

* Designed for use in line operated B&W(19 and 20 inch 110℃ deflection circuits ) or color ( 11 and 14 inch 90℃ deflection circuits TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCER Collector-Emitter Voltage RBE= 100Ω 13

📥 Download Datasheet

Preview of BU105 PDF
datasheet Preview Page 2

Datasheet Details

Part number
BU105
Manufacturer
Inchange Semiconductor
File Size
207.46 KB
Datasheet
BU105_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

📁 Related Datasheet

  • BU1006 - Enhanced PowerBridge Rectifiers (Vishay Siliconix)
  • BU1006-E3 - Bridge Rectifiers (Vishay)
  • BU1006-M3 - Bridge Rectifiers (Vishay)
  • BU1006A - Enhanced PowerBridge Rectifiers (Vishay Siliconix)
  • BU1006A-E3 - Bridge Rectifiers (Vishay)
  • BU1008 - Enhanced PowerBridge Rectifiers (Vishay Siliconix)
  • BU1008-E3 - Bridge Rectifiers (Vishay)
  • BU1008-M3 - Bridge Rectifiers (Vishay)

📌 All Tags

Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor BU105-like datasheet

BU105 Stock/Price