BU105 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor BU105 .
High Voltage-VCER= 1300V(Min. Collector-Emitter Saturation Voltage- : VCE(sat)= 5. Minimum Lot-to-Lot variations for.

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Datasheet Specifications

Part number: BU105
Manufacturer: Inchange Semiconductor
File Size: 207.46 KB
Datasheet: BU105_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in line operated B&W(19 and 20 inch 110℃ deflection circuits ) or color ( 11 and 14 inch 90℃ deflection circuits TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCER Collector-Emitter Voltage RBE= 100Ω 13

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BU105 Silicon NPN Power Transistor Inchange Semiconductor

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