BU104D NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min. Low Collector Saturation Voltage- : VCE(sat)= 2. Minimum Lo.

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Datasheet Specifications

Part number: BU104D
Manufacturer: INCHANGE
File Size: 199.83 KB
Datasheet: BU104D-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in horizontal deflection output stages of TV’s and CRT’s. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEX VCEO VEBO IC ICM IB PC TJ Collector-Base Voltage Collector-Emitter Voltage VBE= -5V Collector-Emitter Voltage Emitter-Base Voltage Collector C

BU104D Distributors

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BU104D NPN Transistor INCHANGE

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