BU109 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor BU109 .
Excellent Safe Operating Area. Collector-Emitter Saturation Voltage- : VCE(sat)= 1. Collector-Emitter Sustaining Voltag.

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Datasheet Specifications

Part number: BU109
Manufacturer: INCHANGE
File Size: 203.60 KB
Datasheet: BU109-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for horizontal deflection output stage of TVs and CRTs applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCEV Collector-Emitter Voltage- VBE= -1.5V 330 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base

BU109 Distributors

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BU109 NPN Transistor INCHANGE

INCHANGE BU109-like datasheet